Abstract

Demonstration of a concept for a single-frequency, grating-outcoupled surface-emitting (GSE) semiconductor laser is reported at wavelengths of 1310 and 1550 nm with output powers exceeding 2 mW. First-order distributed Bragg reflector (DBR) gratings are used for feedback and a second-order grating provides surface emission. The device has a 6 x 10 micrometers outcoupling aperture that approximately matches the spot size of a single mode fiber. This architecture allows probe-testing at the wafer level similar to vertical cavity surface emitting lasers (VCSELs). These initial GSE lasers have demonstrated pulsed threshold currents of 42 mA at 1288 nm and 49 mA at 1552 nm with ~ 40 dB side-mode suppression ratios (SMSR).© (2002) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.

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