Abstract
The chemical etching system SBW: H2O: H3PO4 (where SBW = saturated bromine water) has been used for AllnAs MBE material. This solution exhibits a diffusion-controlled reaction with low etching rate, linear dependence of the etched depth against etching time and good morphologies. With this solution a second-order grating has been made in AlInAs by means of holographic techniques.
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