Graphitic N-doped graphene via solution plasma with a single dielectric barrier

Abstract

Graphitic nitrogen-doped graphene (g-NG) with significantly high nitrogen content, i.e., 18.79 at.%, could be produced by the electrical discharge in liquid, so-called “solution plasma”, with a single dielectric barrier. The proposed system could reduce the excessive current, resulting in stabilizing the glow plasma and maintaining the overall temperature. It could promote the preservation of nitrogen atoms from evaporation during the synthesis process and the formation of a graphitic carbon framework. Moreover, the influence of the precursors, i.e., six-membered ring organic molecules with and without the substitution of nitrogen atoms and the nitrogen-based functional groups, was also investigated to provide the guideline for the synthesis of g-NG via this proposed method. The substitution of nitrogen atoms in the benzene ring could be used to synthesize g-NG with higher nitrogen dopants, compared to the benzene ring with only nitrogen-based functional groups. • Graphitic nitrogen-doped graphene (g-NG) was successfully synthesized. • The nitrogen doping concentration was incredibly high (18.79 at.%). • The synthesis was conducted by solution plasma with single dielectric barrier. • Lower discharge current in the solution plasma was a key for formation of g-NG.