Abstract
AbstractGraphitic carbon nitride (g‐C3N4), as a non‐metallic two‐dimensional semiconductor material, has the advantages of low‐cost, simple synthesis, excellent chemical and thermal stability, etc. Due to its unique electronic band structure, g‐C3N4 exhibits attractive optoelectronic physical properties. In recent years, it has gained significant attention as a photocatalyst with advanced performance. While most of the current research focuses on the field of photo‐electrocatalysis, the material's fascinating optoelectronic physical properties hold great potential in the field of optoelectronic applications. This review highlights the research on the atom‐ and molecule‐modified g‐C3N4’s optoelectronics properties and its application in optoelectronics applications, such as light‐emitting diodes, photovoltaics, and photodetectors, with the aim of attracting more attention from researchers.
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