Abstract

The higher the electron mobility is, the stricter the requirement for the contact resistivity becomes, especially for graphene, which has an extremely high electron mobility. Although the ohmic contact due to no bandgap was reported in the supplemental of the first graphene paper, the contact resistivity is intrinsically high due to the small density of states in graphene. In this chapter, the issues concerning metal/graphene interface properties are reviewed, and the guidelines to reduce the contact resistivity are discussed, based on the recent understanding of metal/graphene/substrate interactions.

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