Abstract

Graphene transparent conductive electrodes are highly attractive for photodetector (PD) applications due to their excellent electrical and optical properties. The emergence of graphene/semiconductor hybrid heterostructures provides a platform useful for fabricating high-performance optoelectronic devices, thereby overcoming the inherent limitations of graphene. Here, we review the studies of PDs based on graphene/semiconductor hybrid heterostructures, including device physics/design, performance, and process technologies for the optimization of PDs. In the last section, existing technologies and future challenges for PD applications of graphene/semiconductor hybrid heterostructures are discussed.

Highlights

  • A photodetector (PD) is a device for detecting light, the underlying mechanism is conversion of light to an electrical signal called a photocurrent (PC)

  • Despite the frequent use of mechanical cleavage and chemical exfoliation for graphene, we focus on Chemical vapor deposition (CVD)-grown graphene for PDs, most popular for practical device applications at the moment

  • In Si under SiO2, the inversion layer provided a low resistance path for minority charge transport, and acted as a passivation layer on the surface states of SiO2 to effectively collect the charge carriers, resulting in improved PC. These results provide guidelines for establishing the fundamental mechanism of PC generation in graphene-based hybrid optoelectronic devices and for designing hybrid photodetectors based on combinations of two- and three-dimensional materials

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Summary

Introduction

A photodetector (PD) is a device for detecting light, the underlying mechanism is conversion of light to an electrical signal called a photocurrent (PC). We review recent progress in the development of graphene TCEs-based semiconductor hybrid heterojunction PDs. Despite the frequent use of mechanical cleavage and chemical exfoliation for graphene, we focus on CVD-grown graphene for PDs, most popular for practical device applications at the moment. We summarize the technologies reported so far and the significance/outlook for guiding continuing development of the graphene-TCEs-based PDs

Operation Mechanisms
Photovoltaic Effect
Photogating Effect
Figure of Merits for Characterizing Photodetectors
Response Speed
Doping of Graphene
11. Conclusions and Outlook
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