Abstract
It has been shown that graphene can demonstrate ballistic transport at room temperature. This opens up a range of practical applications that do not require graphene to have a band gap, which is one of the most significant challenges for its use in the electronics industry. Here, the very latest high mobility graphene (>100,000 cm2 V−1 s−1) fabrication techniques will be demonstrated so that one such device, called the triangular ballistic rectifier (TBR), can be characterised. The TBR is a four-terminal device with a triangular anti-dot at their intersection; two sides of the triangle are positioned and angled such that ballistic carriers from the two input electrodes are redirected like billiard balls to one of the two output contacts irrespective of the instantaneous polarity of the input. A responsivity of 2400 mV mW−1 is demonstrated at room temperature from a low-frequency input signal. The ballistic nature of the device is justified and explained in more detail with low-temperature measurements.
Highlights
Graphene has the highest carrier mobility and mean free path of any known material at room temperature,and since its conception much work has been done to demonstrate this.[1,2,3,4,5] it was only the introduction of boron nitride (BN) as a substrate that allowed graphene to begin to realise its potential.[6]
We present a device, the triangular ballistic rectifier (TBR), that uses specular scattering at the edge of a triangular anti-dot to redirect the carriers; the TBR has previously been demonstrated in other 2D electron gases (2DEGs).[11,12,13]
A 3-mm circle was scratched through both layers of the resist and water pipetted into the gouge to dissolve the PVA, once the polymethyl methacrylate (PMMA) membrane was free from the Si it was floated in a beaker of water
Summary
Graphene has the highest carrier mobility and mean free path of any known material at room temperature ,and since its conception much work has been done to demonstrate this.[1,2,3,4,5] it was only the introduction of boron nitride (BN) as a substrate that allowed graphene to begin to realise its potential.[6]. By encapsulating graphene between BN flakes using Van Der Waals interactions, the flakes could be stacked up with clean interfaces making superior devices.[7] encapsulating the graphene meant that electrical contacts to the graphene could not any longer be made through the Basel plane; instead, side contacts had to be used. It turned (Received August 9, 2016; accepted September 2, 2016; published online September 20, 2016)
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