Abstract
Reported here is a new method of fabricating the graphene/silicon schottky junction. Using a femtosecond laser, graphene oxides are reduced to graphene and behave a metal. The junction of reduced GO and Si shows rectifying behavior indicating that the junction is schottky junction. Take advantage of the laser fabricating method, one can get reduced GO at any position on the substrate. Xps spectra shows that the reduced GO has only 12% oxygen content, and it is truly have a good conductivity similar to metal. This method opens a new effective way to graphene-based micro nano electronics.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.