Abstract
A simple technology is proposed for preparing a graphene/silicon photodiode with a Schottky barrier. CVD graphene is transferred to a polymer substrate via lamination. The polymer film with graphene is then glued to the surface of a silicon plate via thermal compression. The contacts are deposited on graphene and silicon with a silver paste. The photodiode obtained in this way has the following characteristics: sensitivity of 0.37 A/W, external quantum efficiency of 0.88, and normalized equivalent noise power of 1 pW/Hz1/2. These data are obtained for a wavelength of 520 nm. The range of electromagnetic radiation detected with the photodetector is 320–1100 nm.
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