Abstract
We have grown graphene on 6H-SiC(0001) and 3C-SiC(111)/Si (111) using propane-hydrogen CVD. This contribution studies the effects of pressure on graphene growth and on its structural properties studied through low energy electron diffraction. We show that varying pressure allows to control the formation of graphene on a (6√3×6√3)-R30° interface reconstruction (low pressure) or graphene with in-plane rotational disorder (high pressure) on both 6H-SiC(0001) and 3C-SiC(111). The effects of the SiC morphology before graphene growth are discussed in order to explain the differences observed between polytypes.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
