Abstract
We have grown graphene on 6H-SiC(0001) and 3C-SiC(111)/Si (111) using propane-hydrogen CVD. This contribution studies the effects of pressure on graphene growth and on its structural properties studied through low energy electron diffraction. We show that varying pressure allows to control the formation of graphene on a (6√3×6√3)-R30° interface reconstruction (low pressure) or graphene with in-plane rotational disorder (high pressure) on both 6H-SiC(0001) and 3C-SiC(111). The effects of the SiC morphology before graphene growth are discussed in order to explain the differences observed between polytypes.
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