Abstract
Abstract High-quality monolayer graphene was successfully fabricated by chemical vapor deposition technology. By using the graphene as a saturable absorber, the Yb:Sc 2 SiO 5 crystal passively mode-locked laser was demonstrated for the first time. Stable mode-locked laser pulses were obtained with a repetition rate of 90.7 MHz and an average output power of 480 mW at the center wavelength of 1062.8 nm. The maximum single pulse energy and the maximum peak power were 5.3 nJ and 378 W, respectively.
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