Graphene Quantum Dot-Sensitized ZnO Nanorod/Polymer Schottky Junction UV Detector with Superior External Quantum Efficiency, Detectivity, and Responsivity.

Abstract

Graphene quantum dot (GQD)-sensitized ZnO nanorods/poly(3,4-ethylenedioxythiophene) polystyrenesulfonate (PEDOT:PSS) Schottky junction has been fabricated for visible-blind ultraviolet (UV) photodetector applications. Schottky diode parameters such as ideality factor, effective work function, and series resistance have been studied for GQD-modified and pristine ZnO nanorod-based devices. Under illumination of broadband light of intensity 80 mW/cm2, GQD-sensitized samples showed 11 times higher photocurrent value compared to pristine ZnO at -0.75 V external bias. GQD-modified detector demonstrated maximum photocurrent at UV region (wavelength ∼340 nm) for all reverse bias voltages. ZnO nanorods/polymer Schottky junction UV detectors revealed high external quantum efficiency (EQE) more than 100%. Interestingly, GQD sensitized nanorod-based device demonstrated high EQE value of 13,161% at -1 V bias (wavelength ∼340 nm), which is eight times higher than pristine ZnO NR-based detector. GQD-modified detectors also showed superior responsivity (36 A/W), detectivity (1.3 × 1012 Hz1/2/W) at -1 V bias under incident of light of wavelength 340 nm. Even at very low intensity of UV light (0.07 mW/cm2), GQD-modified UV detectors showed high photocurrent (∼7.0 mA/cm2).