Graphene quantum dots doped ZnO superstructure (ZnO superstructure/GQDs) for weak UV intensity photodetector application

Abstract

Usually, the photoresponse performances of zinc oxide based ultraviolet (UV) photodetector can be enhanced by improving the nanostructure of zinc oxide. Here, we demonstrate a kind of weak ultraviolet intensity photodetector which bases on ZnO superstructure doped with graphene quantum dots (ZnO superstructure/GQDs). The ZnO superstructure includes a ZnO nanoflower on the top of ZnO nanorod. The nanoflower has large specific surface area that is favor to the absorption of weak UV light, and the nanorod provides a good route for carriers transport. Also, the GQDs can assist the absorption of UV and the transport of carriers. The photo-response performance of the ZnO superstructure/GQDs we measured is obtained at a working bias of 3 V and an irradiate condition of 50 μW/cm2, under the excitation wavelength 365 nm. The results show that ZnO superstructure/GQDs has a low dark current (40 nA) and a good photocurrent (2.1 μA) in a low irradiation and power supply condition, and we calculate the current ratio of on/off is about 52.5 times. Further, we discuss in-depth the synthesis mechanism of ZnO superstructure and the transport mechanism of photo-generated carriers in this paper. At the same time, we develop a UV signal acquisition and voltage conversion system, which proves the practical application reference of ZnO superstructure/GQDs for weak UV intensity photodetector.