Abstract
The application of graphene in the field of microelectronics is becoming more and more urgent with the emergence of bottlenecks in silicon-based semiconductor technology, and the ability of controllable doping in graphene is, therefore, strongly demanded to tune their electronic or optoelectronic properties for the fabrication of high-performance devices. Herein, through seeding zero-dimensional (0D) nitrogen doped graphene quantum dots (N-GQDs) on a catalytic substrate, the graphene monolayer with nitrogen doping is obtained via chemical vapor deposition (CVD). X-ray photoelectron spectroscopy (XPS) characterization shows the doping concentration reaches up to 32%. Experimental and theoretical investigations reveal that N-GQDs act as the nucleation sites for the epitaxial growth of doped graphene monolayers. Finally, infrared photodetector built on N doped graphene (NG) film is fabricated, accompanying with high detectivity (~1.52 × 1010 cm Hz1/2 W−1) and responsivity (79 mA W−1) at the wavelength of 1550 nm. Our study may provide a controllable and convenient approach to achieve doped graphene, which paves the way for the application of graphene in the field of microelectronics.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
