Abstract
We demonstrated a graphene photodetector integrated on silicon nitride waveguide. The photodetector worked in the photoconductor mode. The detection mechanisms of the device were based on photo-thermoelectric effect and bolometric effect. The waveguide absorption (0.025 dB/μm) with a chemical vapor deposition grown monolayer graphene on top was studied experimentally. The measurement agreed well with the simulation result. The Fermi level of the top layer graphene in the photodetector was analyzed by using the field-effect transport measurement. A maximum internal responsivity of 126 mA/W with dynamic response of 1 K Hz was achieved in the telecommunication band. The unique combination of graphene and silicon nitride integrated circuit can potentially lead to unprecedented nonlinear and optoelectronic applications.
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