Abstract

The century-old controversy over two contradicting theories on radiation pressure of light proposed by Abraham and Minkowski can come to an end if there is a direct method to measure the surface deformation of the target material due to momentum transfer of photons. Here we have investigated the effect of radiation pressure on the surface morphology of Graphene Oxide (GO) film, experienced due to low power focused laser irradiation. In-depth investigation has been carried out to probe the bending of the GO surface due to radiation pressure by Atomic Force Microscopy (AFM) and subsequently the uniaxial strain induced on the GO film has been probed by Raman Spectroscopy. Our results show GO film experience an inward pressure due to laser radiation resulting in inward bending of the surface, which is consistent with the Abraham theory. The bending diameter and depth of the irradiated spot show linear dependence with the laser power while an abrupt change in depth and diameter of the irradiated spot is observed at the breaking point. Such abrupt change in depth is attributed to the thinning of the GO film by laser irradiation.

Highlights

  • Experimental evidence in support of the existence of radiation pressure of light is one of the well-known controversial topic in physics[1]

  • Bending of Graphene Oxide (GO) thin film has been noticed for laser power below 1.59 mW and beyond which the laser beam ignites etching of the GO surface

  • The above mentioned inward bending and etching of GO surface has been thoroughly investigated by using Atomic Force Microscopy (AFM) and Raman spectroscopy

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Summary

Introduction

Experimental evidence in support of the existence of radiation pressure of light is one of the well-known controversial topic in physics[1]. We report for the first time direct observation of surface deformation on thin film of two dimensional GO due to the radiation pressure of low power laser irradiation.

Results
Conclusion
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