Graphene nanoplatelet/silicon nitride composites with high electrical conductivity

Abstract

Silicon nitride (Si3N4) processed with up to 25vol.% of graphene nanoplatelets (GNPs) gives conductive composites with the highest electrical conductivity (40Scm−1) reported for these ceramics with added conductive particles. During compaction and pressure-assisted densification of the composites in the spark plasma sintering (SPS), a preferred orientation of GNPs occurs. Consequently, the electrical conductivity measured along the direction perpendicular to the SPS pressing axis is more than one order of magnitude higher than the one measured along the parallel direction.Percolation in the composites is observed for 7–9 vol.% of GNPs, depending on the measuring direction, perpendicular or parallel to the pressing axis. Different conduction mechanisms are apparent for the two orthogonal orientations. Charge transport along the direction defined by the graphene ab-plane (perpendicular direction) may be explained by a two dimensional variable range hopping mechanism, whereas conduction in the parallel direction shows a more complex behavior, with a metallic-type transition (dσ/dT<0) for high GNP contents. A thin amorphous layer was identified at the Si3N4/GNPs interface that may affect the conduction for the parallel configuration.