Abstract
Structures of c-Si/PS/GNF/Au and c-Si/PS/CNT/Au have been developed through a simple and inexpensive fabrication method. Porous silicon (PS) layers with nanometer pore sizes have been created by the electrochemical anodization method, which is simple, low-cost, and efficient. Then, graphene nanoflakes (GNF) and carbon nanotubes (CNT) have been deposited by the spin coating method on the porous silicon. PS/GNF and PS/CNT structures showed a considerable reduction in the luminescence of porous silicon which could be attributed by an interaction between porous silicon and carbon nanotubes or graphene nanoflakes. Moreover, SEM images revealed the distribution of these carbon materials on the porous silicon, even different agglomerations could be appreciated both CNT and GNF. Electrical characterization showed rectifying and ohmic behavior with some anomalies that can be related to these carbon structures. Furthermore, it was possible to fit a transport mechanism that resulted to be Space charge Limit Current (SCLC), due to different simulations carried out in this study.
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