Abstract
The present paper investigates the electrical and physical characteristics of graphene material aiming its use as an active device base material for nanotransistors and nanosensors. The device structures namely nanotransistors are studied and compared to that of silicon NanoMOSFET. The transport mechanism model based essentially on the ballistic transport using the Fermi level variations has been discussed for both device structures SiNanoFET and GNanoFET. The switching mechanisms and the threshold voltage limits are discussed aiming reduction of the switching time and ON/OFF ratio for better device reliability. Finally a perspective on device integration is introduced.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
