Abstract
Graphene and P-type indium phosphide (P-InP) could be combined by van der Waals forces to form a Schottky junction, which can be applied in photodetection. This study reported a graphene/P-InP Schottky junction near-infrared photodetector with a 3-nm-thick $${\text{Al}}_{2} {\text{O}}_{3}$$ passivation layer and investigated the photoelectric characteristics of such device. As a result, the near-infrared photodetector had a Schottky barrier of 0.89 eV. Besides, this device had a significant response to the wavelength of 808 nm near-infrared light with responsivity and detectivity up to 5.2 mA/W and $$1.3 \times 10^{10} \;{\text{cm Hz}}^{1/2} \;{\text{W}}^{ - 1}$$ , respectively, under a reverse bias voltage of 0.4 V. It is expected that the Graphene/P-InP Schottky junction near-infrared photodetector with an $${\text{Al}}_{2} {\text{O}}_{3}$$ passivation layer may play a vital role in the field of optoelectronic devices in future.
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