Abstract
We report the first direct synthesis of graphene on SiO2/Si by hot-filament chemical vapor deposition. Graphene deposition was conducted at low pressures (35 Torr) with a mixture of methane/hydrogen and a substrate temperature of 970 °C followed by spontaneous cooling to room temperature. A thin copper-strip was deposited in the middle of the SiO2/Si substrate as catalytic material. Raman spectroscopy mapping and atomic force microscopy measurements indicate the growth of few-layers of graphene over the entire SiO2/Si substrate, far beyond the thin copper-strip, while X-ray photoelectron spectroscopy and energy-dispersive X-ray spectroscopy showed negligible amounts of copper next to the initially deposited strip. The scale of the graphene nanocrystal was estimated by Raman spectroscopy and scanning electron microscopy.
Highlights
Since graphene was first obtained by microexfoliation of graphite in 2004 [1] it has been regarded as a promising material due to its excellent properties and potential applications [2,3,4,5,6,7]
Many studies have focused on obtaining graphene using a wide variety of methods [8,9,10,11], e.g., the microexfoliation of graphite [1], graphene oxide reduction [12], epitaxial growth on SiC [13,14] and chemical vapor deposition (CVD) on different substrates [15,16]
This paper reports a novel method suitable for industrial scale-up production to directly grow high-quality graphene on SiO2 /Si substrates by hot filament chemical vapor deposition (HFCVD)
Summary
Since graphene was first obtained by microexfoliation of graphite in 2004 [1] it has been regarded as a promising material due to its excellent properties and potential applications [2,3,4,5,6,7]. Many studies have focused on obtaining graphene using a wide variety of methods [8,9,10,11], e.g., the microexfoliation of graphite [1], graphene oxide reduction [12], epitaxial growth on SiC [13,14] and chemical vapor deposition (CVD) on different substrates [15,16] This last method is the most promising because the growth parameters can be controlled to modify the structural characteristics of the material and the number of graphene layers (monolayer, bilayer, few layers, and multilayers) deposited [17,18].
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