Abstract
Fifteen-layered graphene films have been successfully deposited onto flexible substrates using a commercial ink consisting of graphene particles dispersed in an acrylic polymer binder. A value of was obtained for the density of defects, primarily located at the flake edges, from the ratio of the D and G Raman peaks located at and respectively. thick drop-cast films on interdigitated silver electrodes exhibited Ohmic conduction with a small activation energy of 12 meV over the temperature range from to The photo-thermoelectric effect is believed to be responsible for photoconduction through graphene films under illumination intensity of 10 mW m−2 at corresponding to the UV absorption peak. The photo-transient decay at the bias of involves two relaxation processes when the illumination is switched off and values of and are found for the relaxation time constant using the Kohlrauch stretched exponential function analysis.
Highlights
The mechanical, electrical, and optical properties of graphene are outstandingly promising for exploitation in the wide range of possible applications such as field effect transistors, sensors, for flexible and wearable electronics [1,2,3]
Mechanical exfoliation and chemical vapour deposition (CVD) are commonly used to synthesise high quality graphene films, often in conjunction with high temperature annealing to reduce the number of defects [5]
We have recently reported a positive value of 1.5 ́ 10-3 K-1 for the temperature coefficient of resistance for printed 0.5 mm thick graphene films on flexible plastic substrates, over the temperature range from 260 to 330 K [16]
Summary
The mechanical, electrical, and optical properties of graphene are outstandingly promising for exploitation in the wide range of possible applications such as field effect transistors, sensors, for flexible and wearable electronics [1,2,3]. Nitrogen doping in high concentration contributes electrons to delocalised states of graphene, causing the shift of the Dirac energy [7]. High transparency has been achieved for CVD multilayer graphene doped with ferric chloride and tin (II) chloride [8]. Values of 250 meV and 1000 cm V-1 s-1 were obtained for tuneable band gap and mobility for an exfoliated graphene bilayer used in a dual gate fieldeffect transistor configuration between gold top and platinum bottom electrodes [9]
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