Abstract
This paper presents a SPICE-like graphene field-effect transistor (GFET) model with an improved carrier mobility analysis. The model considers the mobility difference between the electrons and the holes in graphene, as well as the mobility variation against the carrier density. Closed-form analytical solutions have been derived, and the model has been implemented in Verilog-A language. This was compiled into an advanced design system. The proposed model gives excellent agreement between the simulation results and the measurement data for both the hole and electron conduction simultaneously. The model is suitable for the exploration of GFET-based applications, especially for those using the ambipolar transfer property of GFET.
Highlights
T HE single-atomic-thick nature, high carrier mobility, high thermal conductivity, and ambipolar transfer characteristics make graphene attractive for many electronic applications
Since the carrier mobility of the monolayer graphene decreases with the increase in the carrier density, an additional term derived from the suggested mobility function in [23] is added to (7)
In order to verify the graphene field-effect transistor (GFET) drain current model presented in this paper, the model has been implemented in Verilog-A language and imported in an advanced design system [32]
Summary
T HE single-atomic-thick nature, high carrier mobility, high thermal conductivity, and ambipolar transfer characteristics make graphene attractive for many electronic applications. Comparisons of existing GFET models were made in [20], leading to a Verilog-A compatible model with the improved accuracy in the vicinity of the Dirac point These GFET models were in agreement with the measurement data for either electron or hole conduction, modeling of both the conduction modes simultaneously was inaccurate due to the use of identical carrier mobility for both the electrons and the holes. There have been reports using distinct mobilities for each of the charge carriers [24]–[26], these models match poorly with the measurement data. The work presented in this paper aims to create an effective carrier mobility, considering the mobility difference in electron and hole, including the mobility variation against the carrier density.
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