Abstract
The photoresponse properties of Al/p-Si/GO:TiO2/Au diodes were investigated using transient photocurrent and conductance spectroscopy techniques. The average barrier height and ideality factor values of the diodes were found to be 0.601 ± 0.001 eV and 17.9.3 ± 9. It is seen that the electronic parameters of the diodes depend on GO content. The obtained ideality factor is higher than unity due to the low carrier mobility of the organic interlayer. The change in the capacitance of the diodes indicates a continuous distribution of interface states. The photoresponse properties of the diodes are changed with GO content. Al/p-Si/GO:TiO2/Au having 3% GO weight exhibited the highest photosensitivity. The obtained results indicates that the prepared photodiodes can be used as a photosensor in optoelectronic device applications.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
