Graphene diffusion barrier for forming ohmic contact on N-polar n-type GaN for high-power vertical-geometry light-emitting diodes

Abstract

Graphene sheets were employed as a diffusion barrier to form highly reliable ohmic contacts to N-polar n-GaN for high-power vertical-configuration LEDs (VLEDs). Before annealing, both Ti/Al and Ti/graphene/Al contacts exhibit ohmic behavior. After annealing at 250 °C, unlike the Ti/Al contact, the Ti/graphene/Al contacts remain ohmic with a contact resistivity of 7.5 × 10−4 Ω cm2. Secondary ion mass spectroscopy (SIMS) results show that the graphene sheets serve as a barrier to the outdiffusion of Ga atoms into the electrode. On the basis of SIMS and X-ray photoemission spectroscopy results, the ohmic and degradation behaviors of the Ti-based contacts are described and discussed.