Abstract
In this work, graphene-coated SiC nanowires (SiCnw) were fabricated by SiC epitaxial growth method. Firstly, the centimeter-scale single crystal SiC nanowires were synthesized through carbothermal reduction without any catalysts. Secondly, the epitaxial graphene grows on the surface of the SiCnw in a high vacuum and high-temperature environment to obtain graphene-coated pearl-chain-shaped SiCnw. In addition to the observed graphene layer coated on the surfaces of SiCnw, the formed β-SiC particles are densely and orderly arranged along the SiCnw. The growth of graphene layer coated on the surfaces of SiCnw can be ascribed to the thermal evaporation of Si or SiO2 on the surfaces of SiCnw. The formation mechanism of SiC particles is speculated to be the carbothermic reduction between the SiO and the CO or residual carbon generated by decomposition of SiC nanowires. The graphene-coated pearl-chain-shaped SiCnw have many potential applications in ceramic reinforcement, optoelectronics, mid-infrared and EM wave absorption devices.
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