Abstract
In this article, we study superfluid behavior of a gas of spatially indirect magnetoexcitons with reference to a system of two graphene layers embedded in a multilayer dielectric structure. The system is considered as an alternative of a double quantum well in a GaAs heterostructure. We determine a range of parameters (interlayer distance, dielectric constant, magnetic field, and gate voltage) where magnetoexciton superfluidity can be achieved. Temperature of superfluid transition is computed. A reduction of critical parameters caused by impurities is evaluated and critical impurity concentration is determined.
Highlights
Recent progress in creation of heterostructures with two graphene layers separated by a thin dielectrics [1] opens possibilities to use graphene for creation of multiple quantum well structures with separately accessed conducting layers
Our study extends the results of [8], where a system of two graphene layers embedded into a bulk dielectric matrix was considered
We describe electron-hole pairing in zero Landau level in graphene by the wave function that is a generalization of the wave function [15] to the multicomponent case
Summary
Recent progress in creation of heterostructures with two graphene layers separated by a thin dielectrics [1] opens possibilities to use graphene for creation of multiple quantum well structures with separately accessed conducting layers. The idea to use graphene for the realization of electron-hole superfluidity in quantum Hall bilayers [6,7,8,9] looks very attractive. We describe electron-hole pairing in zero Landau level in graphene by the wave function that is a generalization of the wave function [15] to the multicomponent case If a one component bilayer system is balanced, the order parameter for the electron-hole pairing is maximum.
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