Abstract
Scattering matrix formalism is employed to calculate the conductance in a graphene-based N/F/N/F/N junction in the ballistic regime. The manipulation of spin transport for any number of N/F junctions is investigated by both the electrode gate and magnetic barriers. Kronig-Penney model is applied to consider the effects of barriers on spin transport in graphene. By considering a sequence of N/F junctions we have proposed that N/F/N junction could act like a polarizer. In this way, unpolarized charge carriers while traversing through the consecutive N/F/N junctions turn into polarized charge carriers.
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