Abstract
The idea of a raster pattern magnetoresistor made of thin films of III–V compounds and a metallic layer has been known for over fifty years. Based on this knowledge, we present the construction of a magnetoresistor made of combined graphene and metallic strip patterns. The presented device is implemented using a monolayer of graphene epitaxially grown on a semi-insulating substrate. A graphene strip pattern magnetoresistor gives a promising wide range of practical applications due to its very high sensitivity combined with the mono-atomic thickness of the sensitive layer, the simplicity of realization, and a very convenient principle of sensor operation assuming only the usage of two electrical terminals.
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