Graphene Based Heterojunction PIN Device as Photo-Sensor

Abstract

In this paper, we propose to prospects of Multiple-Graphene-Layer (MGL) based vertically doped p ++-n-n - -n ++ Avalanche photo diode-sensor in visible wavelength region (400nm-700nm). At room temperature, the authors have studied the high carrier mobility, intrinsic optical and mechanical properties in Graphene in various novel applications. To study the comparative analysis between the experimental and analytical observation of APD sensor, the authors have design, developed and experimentally verified Quantum-Corrected Field Maximum Classical Drift-Diffusion (QCFMCDD) mathematical model. The authors have compared the results with those of Si/4H- SiC super-lattice avalanche photo-diode sensor at 600 nm wavelength of incident radiation. It is noticed that Graphene performs better than Si/4H-SiC counterpart in terms of photo-responsivity (0.76A/W vs. 0.60A/W) and quantum efficiency (82% vs. 60%) for optical irradiation in visible wavelength region. The optical-electrical performance of 3x3 array type Graphene photo sensor diode is further analyzed and compared with those of its single array counterpart. In published literature, the available photo detector comprises with the designed photo-sensor shows the significant overall better performance in visible wavelength region.