Abstract
Although graphene has the longest mean free path of carriers of any known electronic material, very few novel devices have been reported to harness this extraordinary property. Here we demonstrate a ballistic nano-rectifier fabricated by creating an asymmetric cross-junction in single-layer graphene sandwiched between boron nitride flakes. A mobility ∼200,000 cm2 V−1 s−1 is achieved at room temperature, well beyond that required for ballistic transport. This enables a voltage responsivity as high as 23,000 mV mW−1 with a low-frequency input signal. Taking advantage of the output channels being orthogonal to the input terminals, the noise is found to be not strongly influenced by the input. Hence, the corresponding noise-equivalent power is as low as 0.64 pW Hz−1/2. Such performance is even comparable to superconducting bolometers, which however need to operate at cryogenic temperatures. Furthermore, output oscillations are observed at low temperatures, the period of which agrees with the lateral size quantization.
Highlights
Graphene has the longest mean free path of carriers of any known electronic material, very few novel devices have been reported to harness this extraordinary property
The ballistic rectifier (BR) was first demonstrated in InGaAs/AlGaAs hetero-structures and its full-wave rectifying functionality resembles that of a bridge rectifier, which in contrast requires four individual diodes
The substrate used was SiO2, which leaves charge puddles in the graphene that scatter the carriers and lower the mobility to about 1,810 cm[2] V À 1 s À 1, making the device not truly in the ballistic regime. This resulted in a responsivity of 110 mV mW À 1 and a noise-equivalent power (NEP) of 10 À 9 W Hz À 1/2 (Supplementary Equations 1 and 2)
Summary
Graphene has the longest mean free path of carriers of any known electronic material, very few novel devices have been reported to harness this extraordinary property. A mobility B200,000 cm[2] V À 1 s À 1 is achieved at room temperature, well beyond that required for ballistic transport This enables a voltage responsivity as high as 23,000 mV mW À 1 with a low-frequency input signal. The substrate used was SiO2, which leaves charge puddles in the graphene that scatter the carriers and lower the mobility to about 1,810 cm[2] V À 1 s À 1, making the device not truly in the ballistic regime This resulted in a responsivity of 110 mV mW À 1 and a noise-equivalent power (NEP) of 10 À 9 W Hz À 1/2 (Supplementary Equations 1 and 2). Such a performance has far only been matched by superconducting bolometers, which must operate at cryogenic temperatures
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