Abstract
In this paper, the graphene-assisted Goos–Hänchen (GH) shift of the optical beam reflected from a planar multilayer configuration is investigated. The increased positive Goos–Hänchen shifts can be modulated by adjusting the Fermi energy due to graphene with unique optical properties in the visible light range. Moreover, the GH shift can be tuned by varying the layers of graphene, the thickness of the medium, incident wavelength, and so on. These results will be useful for designing the novel graphene-based optical sensing and switching.
Highlights
When a light beam is completely reflected across two different media, there is a tiny transverse displacement between the practical reflects light and geometric reflects light in the plane of incidence [1]
Due to the characteristics of quantum tunneling in FTIR, light is coupled into the second prism with a symmetric biprism structure with low transmission amplitude, which significantly reproduces the GH shift. e graphene-assisted Goos–Hanchen shift in a two-prism frustrated total internal reflection configuration is investigated, and the GH shift can be enhanced by transmission resonance to more than 10 times the wavelength order, which could be used in the design of optical sensors and optical switches [23]
We study the GH shift in the visible band based on graphene-boron nitride- (BN-) SiO2 heterostructures
Summary
When a light beam is completely reflected across two different media, there is a tiny transverse displacement between the practical reflects light and geometric reflects light in the plane of incidence [1] This displacement has been named as the Goos–Hanchen shift, which was discovered firstly by Goos and Hanchen in 1947 [1], and it was addressed by Artmann in 1948 [2]. E graphene-assisted Goos–Hanchen shift in a two-prism frustrated total internal reflection configuration is investigated, and the GH shift can be enhanced by transmission resonance to more than 10 times the wavelength order, which could be used in the design of optical sensors and optical switches [23]. The GH shift is related to the layers of graphene, and the thickness of BN and SiO2. e results based on the proposed structure will provide a new way for developing optical sensing and optical switches
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