Abstract
Electrical and noise properties of graphene contacts to AlGaN/GaN heterostructures were studied experimentally. It was found that graphene on AlGaN forms a high-quality Schottky barrier with the barrier height dependent on the bias. The apparent barrier heights for this kind of Schottky diode were found to be relatively high, varying within the range of φb = (1.0–1.26) eV. AlGaN/GaN fin-shaped field-effect transistors (finFETs) with a graphene gate were fabricated and studied. These devices demonstrated ~8 order of magnitude on/off ratio, subthreshold slope of ~1.3, and low subthreshold current in the sub-picoamperes range. The effective trap density responsible for the 1/f low-frequency noise was found within the range of (1–5) · 1019 eV−1 cm−3. These values are of the same order of magnitude as reported earlier and in AlGaN/GaN transistors with Ni/Au Schottky gate studied as a reference in the current study. A good quality of graphene/AlGaN Schottky barrier diodes and AlGaN/GaN transistors opens the way for transparent GaN-based electronics and GaN-based devices exploring vertical electron transport in graphene.
Highlights
The invention of graphene opened the road to new exciting physics and new devices based on the unique ultimate geometry of graphene and its specific physical properties and effects
Graphene was patterned in oxygen plasma using an Plasmalab high-speed electrochemical delamination, graphene was patterned in oxygen plasma using 80 an Instruments, Bristol, UK)
After high-speed electrochemical delamination, graphene was patterned in oxygen plasma using an
Summary
The invention of graphene opened the road to new exciting physics and new devices based on the unique ultimate geometry of graphene and its specific physical properties and effects. Materials 2020, 13, 4140 diodes and displays [8], vertical graphene-based hot electron transistors [9,10,11], and phase transitions in 2D transition metal chalcogenides [12] Another promising field, which is the topic of the current letter, is graphene electrodes for electronic devices. It is known that graphene can form either an ohmic or Schottky barrier contact emitting diodes and displays [8], vertical graphene-based hot electron transistors [9,10,11], and phase to semiconductors References transitions in 2D transition metal chalcogenides [12].therein) This gives an opportunity to fabricate all transparent electrodes field-effect transistors and devices. Frequency noise properties, which characterize the quality of the structures and are crucial for the majority of applications
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
