Abstract
RF switches, which use a combination of graphene and two-dimensional high-density electron gas (2DEG) in the AlGaN/GaN system, were proposed and studied in the frequency band from 10 MHz to 114.5 GHz. The switches were integrated into the coplanar waveguide, which allows them to be used in any system without the use of, e.g., bonding, flip-chip and other technologies and avoiding the matching problems. The on-state insertion losses for the designed switches were measured to range from 7.4 to 19.4 dB, depending on the frequency and switch design. Although, at frequencies above 70 GHz, the switches were less effective, the switching effect was still evident with an approximately 4 dB on–off ratio. The best switches exhibited rise and fall switching times of ~25 ns and ~17 ns, respectively. The use of such a switch can provide up to 20 MHz of bandwidth in time-modulated systems, which is an outstanding result for such systems. The proposed equivalent circuit describes well the switching characteristics and can be used to design switches with required parameters.
Highlights
There are less conventional technologies available, such as micro-electro-mechanical systems (MEMS) [12,13] and switches based on phase changing materials (PCM) [14,15]
We propose and study an approach wherein the combination of graphene and two-dimensional high-density electron gas (2DEG) in the AlGaN/GaN system allows us to switch effectively at Radio frequency (RF) and mm-wave frequencies
We have proposed and studied the design of a switch that uses a combination of graphene and two-dimensional high-density electron gas (2DEG) in an AlGaN/GaN
Summary
Publisher’s Note: MDPI stays neutral with regard to jurisdictional claims in published maps and institutional affiliations. Micromachines 2021, 12, 1343 the possibilities of graphene-based RF switches for the millimeter-wave band [19,20,21,22]. We propose and study an approach wherein the combination of graphene and two-dimensional high-density electron gas (2DEG) in the AlGaN/GaN system allows us to switch effectively at RF and mm-wave frequencies. Cutaway view view of of the the structure; As opposed to a conventional transistor-based grown design,by where a metal gate is Phase used, We used AlGaN/GaN epitaxial heterostructures. This is a typical structure of AlGaN/GaN high electron mobility transistors (HEMTs) for high-frequency applications [32]. The current–voltage characteristic shown shown the highest gate as in shown in 4
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