Abstract
A method of manufacturing granular Fe–Pb–O films is described. The temperature dependence of resistivity in these samples exhibits a semiconductorlike behavior indicating that the electronic transport takes place via a tunneling process. The magnetoresistance ratio has been found to be about 10% at room temperature. The enhancement of the tunneling magnetoresistance effect is believed to be due to spin-dependent tunneling through the tunneling barrier containing magnetic ferrite formed by PbO and α-Fe2O3.
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