Abstract
The ternary Cu3SbSe4 thermoelectric material with diamond-like structure exhibits good thermoelectric performance in the middle temperature region. In this study, the Cu3Sb[Formula: see text]In[Formula: see text]Se4 ([Formula: see text]= 0–0.03) materials were fabricated by melting-annealing-ball milling-hot pressing process. The influences of In-doping and grain size on the microstructure and thermoelectric properties of Cu3Sb[Formula: see text]In[Formula: see text]Se4 were evaluated. It is found that the electricity conduction at room temperature for Cu3Sb[Formula: see text]In[Formula: see text]Se4 sample was significantly increased to 6.1 × 103Sm[Formula: see text] due to the In-doping. Additionally, during the powder processing, a relatively low thermal conductivity for the refinement Cu3Sb[Formula: see text]In[Formula: see text]Se4-BM-72H sample was obtained. Benefiting from the enhanced electrical conductivity and the decreased thermal conductivity, the maximum zT value of 0.75 was achieved for Cu3Sb[Formula: see text]In[Formula: see text]Se4-BM-36H at 650 K.
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