Grain-Size Effects on Multi-Wire Slurry Sawing of Translucent Alumina Ceramics

Lea Schmidtner,Mathias Herrmann,Christos G Aneziris

doi:10.3390/ceramics3040036

Lea Schmidtner, Mathias Herrmann + Show 1 more

Open Access

https://doi.org/10.3390/ceramics3040036

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Abstract

The technology of multi-wire sawing is well established in the production of silicon wafers but can also be applied in the production of ceramic substrates. In this study, the influence of the Al2O3-grain size of the alumina ceramic on the efficiency of the multi-wire slurry process was investigated. The grain size of HIPed alumina ceramics was changed by heat treatment processes at 1350 °C and 1400 °C. A B4C slurry was used for the investigation of the cutting of high purity alumina ceramic. With increasing grain size of the ceramic, the efficiency of the sawing process increases. The analysis of the as-cut surface morphology of the substrates shows a change in material removal from trans- to intergranular micro-fracture with increasing grain size. Furthermore, grain coarsening leads to substrates with increased roughness values and reduced biaxial strength.

Highlights

Multi-wire sawing has become the leading technology in wafer production for semiconductor materials
The analysis of the as-cut surface morphology of the substrates shows a change in material removal from trans- to intergranular micro-fracture with increasing grain size
The grain size of the HIPed alumina ceramics was changed by heat treatment processes at 1350 ◦ C

Summary

Introduction

Multi-wire sawing has become the leading technology in wafer production for semiconductor materials. Substrates of other materials such as ceramics are required. Alumina ceramic substrates are used for sensor applications, energy storage technology, and applications in power electronics [1,2]. Multi-wire sawing is a potential technology to produce such components. The main advantages of multi-wire slurry sawing are the low heat dissipation during machining, resulting in a low surface damage depth and the small material kerf width due to wire diameters ≤0.3 mm. In analogy to lapping or polishing, low surface roughness can be achieved with properly adjusted machining parameters [3].

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