Grain size dependence of the thermal conductivity of polycrystalline chemical vapor deposited β-SiC at low temperatures

Abstract

Thermal conductivity data of polycrystalline chemical vapor deposited cubic silicon carbide are calculated from thermal diffusivity and heat capacity data in the temperature region of 80–300 K. Below 200 K, a linear dependence of the thermal conductivity with the product of grain size of the silicon carbide and cubic temperature is observed. This is explained in terms of phonon scattering by the grain boundaries.