Abstract
Transformation-induced plasticity (TRIP) high-entropy alloy (HEAs) have shown promising mechanical properties, making them potential candidates for various applications. The preparation of structures with fine grains and heterogeneous orientation is important to improve the strength and ductility of TRIP-HEAs. However, the evolution and mechanism of grain refinement with heterogeneously oriented structures of TRIP-HEAs during thermal deformation and its effect on strain delocalization are not clear. In this paper, the microstructure evolution and strain delocalization of a TRIP-HEA, Co35Cr25Ni15Mn15Fe10 (atomic percent, at %) was examined through hot compression tests conducted at temperatures ranging from 900 ℃ to 1000 ℃, and strain rates ranging from 0.001 s−1 to 0.1 s−1. The results revealed that the average grain size of the alloy decreases with increasing deformation temperature and reducing strain rate due to the appearance of dynamic recrystallization (DRX) and annealed twins. After deformation at 1000 °C-0.001 s−1, the average grain size of the alloy decreases from 169.85 μm (initial sample) to 21.5 μm, and the volume fraction of DRX and twin boundaries (TBs) increases to 81.9 % and 37.6 %, respectively. The DRX mechanism of the TRIP-HEA transformed from discontinuous dynamic recrystallization (DDRX) at 900 °C-0.1 s−1/0.01 s−1 to geometric dynamic recrystallization (GDRX) at 900 °C-0.001 s−1 and then to continuous dynamic recrystallization (CDRX) at 950 °C/1000 °C-0.001 s−1. Furthermore, the occurrence of DRX promotes the formation of annealed twins, resulting high volume fraction of high angle boundaries (HAGBs) and twin-matrix pairs, and contributing to grain refinement. Encouragingly, these HAGBs and twin-matrix pairs not only contributes to grain refinement, but also facilitates strain delocalization via dispersing strain and forming strain gradient, thus leading to coordinated deformation. This result is of great significance for understanding and improving the mechanical properties of TRIP-HEAs, and it can help in the design of high-performance TRIP-HEAs for various applications.
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