Abstract
Abstract Grain growth and texture development of magnetron-sputtered Na films on thermally oxidized Si wafers were investigated as a function of sputtering and annealing atmospheres. Ni films of 1 μm thickness were sputtered in either pure Ar or an Ar–H2 gas mixture and subsequently annealed in high vacuum or a hydrogen atmosphere at 800°C. The films were characterized by focused ion-beam microscopy and X-ray diffraction. The Ni films had a strong {111} texture after sputtering. Films sputtered in an Ar-H2 mixture and annealed in H2 underwent abnormal grain growth, resulting in a {100} texture. These films had a mean grain diameter of about 50 μm. The unusual abnormal grain growth is believed to be caused by a cleaning of the Ni films during sputtering and annealing in H2.
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