Abstract
An experimental study of grain growth in dilute binary alloys of copper was performed. It was found that the grain growth law D = Kt n fit most of the data. The grain growth exponent n decreased with solute content until a saturation value was obtained at slightly under 0.2 for both silicon and aluminum solutes. It is concluded that the grain growth exponent n depends upon solute adsorption at the grain boundaries. An estimate of the activation energy was made and it was found that the activation energy decreased with temperature. The activation energies for grain boundary migration compare well with values obtained from internal friction studies on identical alloys. This contributes strong experimental support for the two-step mechanism for complete grain boundary stress relaxation.
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