Abstract
The authors have fabricated the MgB2 bridges 850–6000nm in width on bicrystal (111) MgO substrates with in-plane grain boundaries of the two types: 13°∕13° ⟨110⟩ and 13°∕13° ⟨112⟩. Annealing in oxygen of the films on ⟨110⟩ bicrystal substrates leads to a systematic decrease of critical current, a widening of the transition temperature width, and an improvement of the shape of IV curve that finally looks more like a Josephson junction. They have measured a response of such samples to the microwave radiation at 110GHz with the voltage amplitude up to 0.5mV.
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