Abstract
Crystalline structure, recombination activity, and electron transport properties have been investigated in boron-doped, thin-walled crystals of silicon obtained from hexagons grown by the EFG process (a modification of Stepanov's method). All grain boundaries (GBs) can be divided into special (Σ3, Σ9), near coincidence, highly deviated (Σ3, Σ9, Σ13), and general (i.e., non-special) GBs. Special GBs are electrically inactive to both minority and majority carriers. Near coincidence GBs are active to minority but inactive to majority carriers. General and highly deviated GBs are very active to both minority and majority carriers. The observed classification of GB activity is explained on the basis of a phenomenological model.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
