Year-end Sale % OFF 
Abstract
The “grain‐boundary effect,” which leads to a greatly reduced dc ionic conductivity due to the presence of a blocking layer in the vicinity of the grain boundaries, is studied in detail for ceria ceramics doped with various trivalent dopants (particularly Y3+, Gd3+, and La3+). The effects of porosity, of sintering time, and of dopant size and dopant concentration are investigated. Finally, it is shown that the grain‐boundary effect virtually disappears when nearly silicon‐free starting materials are used.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
