Abstract
The effects of grain boundaries on the electrical performance of semicrystalline silicon solar cells were investigated. It was found that there are at least three distinct types of grain boundaries. Type 1 is present in high efficiency cells and has little or no effect on the cell's performance. Type 2 is characterized by an ohmic shunting of the cell, possibly due to diffusion which has proceeded along open grain boundaries. This type of grain is also characterized by an enhanced red-to-blue ratio. Type 3 grain boundaries also lead to a shunted cell but in this case the shunting mechanism is apparently due to generation-recombination centers in the depletion region. Several experimental techniques were employed to substantiate these conclusions.
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