Abstract
Grain boundaries in pure and boron-doped CoSi 2 samples of different compositions (stoichiometric, cobalt or silicon rich) have been studied by AES and SEM. It appears that after an equilibrium heat treatment at 800°C: (i) intergranular fractures are present on all samples and allow the analysis of grain boundary composition by AES; (ii) in pure samples the chemical grain boundary composition is similar to the bulk composition, no enrichment in cobalt or silicon is observed; (iii) in boron-doped samples, boron is found to segregate at the grain boundaries.
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