Abstract
Since one of the major factors for controlling creep properties in silicon nitride components is the addition of sintering aids, determination of the composition of the resulting intergranular second phases becomes very important. High resolution electron microscopy has been used to investigate the crystalline or non-crystalline character of the grain boundary while analytical electron microscopy studies have focused on the composition of the grain boundary pockets. As sintering aid additions and processing become more complex, multiple second phases are produced. Ascertaining the composition of the grain boundaries and grain boundary pockets is necessary for correlating the microstructure with the creep properties.A dedicated VG HB-5 scanning transmission electron microscope was used to measure the composition of grain boundaries and grain boundary pockets of silicon nitride.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Proceedings, annual meeting, Electron Microscopy Society of America
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
