Abstract
During secondary recrystallization of grain oriented silicon steel, isolated grains are often observed in secondary-recrystallized Goss grains (matrix). In an extraction experiment, the crystallographic relations between each isolated grain and the matrix were investigated. Although the Σ9 grain boundary against Goss orientation is the most frequent in the primary texture, it could not be observed in the relation, but specific grains, which have Σ3 or a high angle misorientation relation, were often observed. As the extraction temperature increased, the frequency of Σ3 decreased and that of GGB (general grain boundary) increased. It was revealed that the Σ9 boundary was mobile, Σ3 was less mobile and GGB was the least mobile. This does not contradict the CSL model but supports it. However, it was not clarified whether this result is caused by grain boundary energy or mobility.
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