Abstract
In this work, anatase Titanium dioxide (TiO<sub>2</sub>) nanowires are synthesized by the hydrothermal method, and its grain and grain boundary behaviors and electrical properties are investigated by alternating current (AC) impedance method under high pressure (up to 34.0 GPa). The relationship between the frequency dependence of impedance <i>Z''</i> and pressure indicate that the conduction mechanism of anatase phase TiO<sub>2</sub> nanowires in the test pressure range is electronic conductivity. It should be noted that the characteristic peaks of <i>Z''</i> move toward high frequency region with pressure increasing, demonstrating that the effect of grain interior on impedance becomes apparent. Additionally, the overall variation trends of grain and grain boundary resistance go downward with pressure increasing, and the descent rate of grain boundary is larger than those of grain before and after phase transition. However, in a range of phase transition (8.2–11.2 GPa, from anatase to baddeleyite phase), grain boundary resistance shows a discontinuously change (increases to 11.2 GPa and then decreases). Based on the different variation trends of grain and grain boundary resistance, it becomes obvious that the phase transition from anatase to baddeleyite phase first occurs at the surface of grain, and then extends to the interior of grain gradually. Also, as an intrinsic characteristic, the relaxation frequency is independent of the geometrical parameters. The pressure dependence of activation energy is obtained by fitting the pressure dependence of relaxation frequency. The activation energy of grain and grain boundary decrease with pressure increasing, implying that the contribution of pressure on the conductivity of sample is positive. Furthermore, the space charge potential for the whole test pressure range is positive, which is determined by the relationship between pressure and relaxation frequency. This fact illustrates that the anion defects are easily formed in the space charge region, and the oxygen defects are the main inducement for TiO<sub>2</sub> phase transformation.
Highlights
nanowires were synthesized via hydrothermal method
electrical properties were investigated by AC impedance method under high pressure
the overall variation trends of grain and grain boundary resistance are downward with increase in pressure
Summary
然而,在对氧化物纳米材料的高压研究中发现,非化学计量比的因素在相变中 有着举足轻重的作用,尤其对材料性质的影响较大。本文采用水热合成法制备了锐 钛矿相 TiO2 纳米线,为了最大限度避免杂质和缺陷的影响,将初始样品在高温下进 行了退火处理,并结合高压在位阻抗谱技术,详细分析了 TiO2 纳米线的高压相变行 为、晶粒和晶界的导电机制变化以及界面空间电荷势的性质,同时对相关机理进行 了探讨。 本文采用水热合成法制备锐钛矿相 TiO2 纳米线,为了避免缺陷和杂质的影响, 对样品进行了高温退火(650°C,4 小时),详细的制备工艺参照文献[6]。高压电学 实验通过金刚石对顶砧产生高压,金刚石砧面为 425 μm,采用预压好的 T-301 垫片 作为封压垫片,垫片中心位置钻取直径为 120 μm 的孔作为样品腔,同时垫片也作 为电学测量的一个电极,另一个电极则通过在金刚石砧面上进行微电路集成获得。 具体过程如下:采用磁控溅射技术在金刚石表面沉积金属钼薄膜,利用光刻技术将 金属钼薄膜刻蚀成微电路。在微电路上面沉积一层氧化铝薄膜用来保护微电路。 然 后用化学方法去除氧化铝,漏出直径约为 50 μm 的检测窗口作为电极,使电极端接 触样品并连接到测试端。详细的金刚石砧面微电路的集成过程参照我们前期的工作 图 1(a)和(b)分别给出了水热合成法制备的锐钛矿相 TiO2 纳米线在 650°C 退火后的 XRD 谱图和 SEM 图片。从图 1 可知,所得样品为锐钛矿相 TiO2 纳米线 [JCPDS:84-1286],其长度约为 3-7 μm,直径约为 50-200 nm。 图 1 经过 650°C退火后的 TiO2 纳米线:(a) XRD 谱图;(b) SEM 图片 Fig. 1.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.