Abstract
AlGaN laser diode (LD), in the ultraviolet (UV) wavelength range of 260 nm–270 nm, with enhanced optical and electrical properties is proposed numerically in this work. A laser diode with a graded upper waveguide (WG) is introduced which greatly increases the output power while lowering the lasing threshold. Optical field is confined in the active region due to the enhancement of refractive index contrast between the WG and the cladding layer (CL). Less electron leakage and a high hole injection efficiency result in higher slope efficiency (SE), and internal quantum efficiency (IQE).
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
